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| Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 12.5 dB Efficiency -- 25% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 39 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21150HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21150HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.5, +65 - 0.5, +15 380 2.2 - 65 to +150 150 200 150 0.84 Unit Vdc Vdc W W/C C C C W W/C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 75C, 33 W CW Symbol RJC Value (1,2) 0.46 0.47 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S21150HR3 MRF5S21150HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 3.2 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- -- 3.7 0.26 9 3.5 -- 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D IM3 ACPR IRL -- -- 11 23 12.5 25 - 37 - 39 - 12 -- -- - 35 - 37 -9 dB % dBc dBc dB MRF5S21150HR3 MRF5S21150HSR3 2 RF Device Data Freescale Semiconductor R1 Vbias + C1 R2 C5 C6 Z6 RF INPUT Z1 C2 Z2 Z3 C4 Z4 C3 Z5 Z8 Z11 Z7 DUT C8 C13 Z9 Z10 Z12 C9 C10 + C11 + C12 + C20 Vsupply C19 Z13 Z14 C17 C18 Z15 Z16 Z17 RF OUTPUT C14 C7 + C15 + C16 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 0.500 x 0.083 Microstrip 0.505 x 0.083 Microstrip 0.536 x 0.083 Microstrip 0.776 x 0.083 Microstrip 0.119 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.024 Microstrip 0.117 x 1.100 Microstrip Z10, Z11 Z12 Z13 Z14 Z15, Z16 Z17 PCB 0.709 x 0.083 Microstrip 0.415 x 1.100 Microstrip 0.874 x 0.083 Microstrip 1.182 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values Part C1 C2, C6, C8, C9, C13, C18, C19 C3,C4 C5, C7, C10, C14 C11, C12, C15, C16 C17 C20 R1, R2 Description 22 F, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 F, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA 293D1106X9035D 100B0R3BW 13661471 Manufacturer AVX ATC ATC Vishay - Vitramon Vishay - Sprague ATC Philips MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 3 C1 C5 R1 C9 C10 C11 C12 C20 R2 C6 C19 CUT OUT AREA C2 C4 C3 C8 C17 C18 C7 C13 C14 C15 C16 MRF5S21150 Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21150HR3(HSR3) Test Circuit Component Layout MRF5S21150HR3 MRF5S21150HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 13 12 G ps , POWER GAIN (dB) 11 10 9 8 7 6 IM3 ACPR IRL Gps D VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 35 30 25 20 -28 -32 -36 -40 -44 2220 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 1300 mA 10 5 2060 2080 2100 2120 2140 2160 2180 2200 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 33 Watts Avg. 14 IDQ = 1900 mA G ps , POWER GAIN (dB) 13 1600 mA 1300 mA 12 1000 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -25 -30 1900 mA -35 IDQ = 700 mA -40 -45 -50 -55 -60 -65 1 1000 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 100 1000 1600 mA 11 700 mA 10 1 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 5th Order -45 7th Order -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 1 10 100 3rd Order Pout , OUTPUT POWER (dBm) 58 Ideal 56 P3dB = 53.41 dBm (219.28 W) P1dB = 52.73 dBm (187.5 W) Actual 52 VDD = 28 Vdc, IDQ = 1300 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 2140 MHz 37 39 41 43 45 47 54 50 48 35 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. (W-CDMA) D Gps VDD = 28 Vdc, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -25 -30 IM3 (dBc), ACPR (dBc) IM3 ACPR -35 -40 -45 -50 -55 100 MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF (dB) -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -25 -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 3.84 MHz Channel BW f, FREQUENCY (MHz) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 11. 2-Carrier W-CDMA Spectrum MRF5S21150HR3 MRF5S21150HSR3 6 RF Device Data Freescale Semiconductor f = 2200 MHz Zload f = 2080 MHz Zo = 25 f = 2080 MHz Zsource f = 2200 MHz VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource 3.05 - j9.66 3.97 - j10.31 4.70 - j11.03 5.45 - j12.41 6.18 - j13.04 Zload 1.02 - j2.94 1.09 - j2.51 1.16 - j2.46 1.16 - j2.58 1.02 - j2.55 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF5S21150HR3 MRF5S21150HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S21150HR3 MRF5S21150HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M (FLANGE) 3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) T A SEATING PLANE STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B - 03 ISSUE D NI - 880 MRF5S21150HR3 B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF5S21150HSR3 MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S21150HR3 MRF5S21150HSR3 Rev. 12 1, 5/2006 MRF5S21150H RF Device Data Freescale Semiconductor |
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